Method and apparatus for high performance switch mode voltage regulators

ABSTRACT

Circuit configurations for a high power switch-mode voltage regulator circuit is disclosed that include an array of Metal Oxide Semiconductor (MOS) switching transistors electrically coupled to one another at their drains and sources and a plurality of gate driver circuits. Each gate driver circuit is coupled to a gate and dedicated to driving only one MOS switching transistor.

This application is a continuation of U.S. patent application Ser. No.11/871,910, filed on Oct. 12, 2007 and titled METHOD AND APPARATUS FORHIGH PERFORMANCE SWITCH MODE VOLTAGE REGULATORS, the disclosure of whichis herein incorporated by reference in its entirety.

TECHNICAL FIELD

The present invention relates generally to the field of analogintegrated circuits. More specifically, the present invention relates toswitch-mode voltage regulators.

BACKGROUND

Low cost, miniaturization, efficiency, and high performances are keyfactors that determine the successes in today consumer electronics. Thatis, consumers prefer low cost, small, high performance, electronicproducts that are also energy efficient. Efficient and high performingproducts require the use of integrated circuits such as switch-modevoltage regulators to deliver high amounts of power efficiently. Lowcosts require that the semiconductor integrated circuits use simple,fewer processing steps so that the manufacturing cost per unit is low.Miniaturization drives the integrated circuits toward using the leastamount of silicon area within a semiconductor chip. Over the years,efforts to improve the cost-size-performance requirements have proventhat the conventional circuit architecture and their manufacturingmethods may have reached its performance limitations. Maintaining thesame circuit architecture and layout while attempting to achieve thecost-size-performance requirements only increase costs and obtainsunsatisfactory results.

With reference to FIG. 1A, the schematic diagram of a conventionalswitch-mode voltage regulator circuit 100 connected to a load (R_(L))160 is described. Conventional circuit architecture and layout forswitch-mode voltage regulator circuit 100 typically includes a gatedriver circuit block 101, a switching circuit block 110, and a bootstrap charging circuit block 120, which are all laid out separately asdiscrete components on a semiconductor die. Switching circuit block 110further includes a high-side power Metal Oxide Field Effect Transistor(MOSFET) switch 102, a low-side power Metal Oxide Field EffectTransistor (MOSFET) switch 103. The switch output (SW) of conventionalswitch-mode voltage regulator circuit 100 is then connected to an outputfilter 150 and to boot strap charging block 120.

More particularly, gate driver circuit block 101 includes a high-sidegate driver circuit 101 _(HS) and a low-side gate driver circuit 101_(LS). High-side gate driver circuit 101 _(HS) is connected in series tohigh-side power MOSFET switch 102 while low-side gate driver circuit 101_(LS) is connected to low-side power MOSFET switch 103 of switchingcircuit block 110. The input terminal of high-side gate driver circuit101 _(HS) receives an inverse drive signal ( PWM) that drives the gateof high-side power MOSFET switch 102. Accordingly, high-side gate drivercircuit 101 _(HS) connects a boot strap supply node (V_(EST)) 101U tothe gate of high-side power MOSFET switch 102 at a logic LOW input andconnects the gate of high-side MOSFET switch 102 gate to source and aswitch node (SW) 101SW at a logic HIGH input. The input terminal oflow-side gate driver circuit 101 _(LS) receives a drive signal (PWM)that drives low-side power MOSFET switch 103. Accordingly, low-side gatedriver circuit 101 _(LS) connects supply voltage (V_(CC)) to the gate oflow-side MOSFET switch 103 at a logic LOW input and connects the gate oflow-side MOSFET switch 103 to the source and an electrical ground 101Gat a logic HIGH input.

Continuing with the description of the conventional architecture ofswitch-mode voltage regulator circuit 100, the drain of high-side powerMOSFET switch 102 is connected to receive an unregulated input voltage(V_(IN)). The source of high-side power MOSFET switch 102 is connectedto the drain of low-side power MOSFET switch 103 at switch node (SW)101SW. The source of low-side power MOSFET switch 103 is connected toelectrical ground 110G.

Referring again to conventional architecture of FIG. 1A, output filter150 includes an inductor 151 connected to an output capacitor (C_(OUT))152. The first terminal of inductor 151 is connected to switch node101SW, the second terminal of inductor 151 is connected to outputcapacitor (C_(OUT)) 152 to form an output terminal 161 of prior-artswitch mode voltage regulator 100. The other terminal of outputcapacitor (C_(OUT)) 152 is connected to electrical ground 110G and tothe source terminal of low-side power MOSFET switch 103.

Finally, in the conventional architecture as shown in FIG. 1A, bootstrap charging circuit block 120 includes a diode (D₁) 121 and a bootcapacitor (C_(BOOT)) 122. The anode terminal of diode (D₁) 121 isconnected to supply voltage (V_(CC)) 123, while the cathode terminal isconnected to one end of boot capacitor (C_(BOOT)) 122 at pull-up node101U. The other end of capacitor (C_(BOOT)) 122 is connected to switchnode (SW) 101SW.

In operation, high side MOSFET switch 102 receives an inverse drivesignal ( PWM) at the input terminal of high-side gate driver circuit 101_(HS). Accordingly, high-side power MOSFET switch 102 is either turnedon or turned off, depending on the voltage level of the drive signal (PWM) signal. At the same time, low-side MOSFET switch is OFF becauselow-side gate driver circuit 101 _(LS) receives the opposite driversignal (PWM). The turning on of high-side power MOSFET switch 102 andturning off low-side power MOSFET 103 causes switch node (SW) 101SW tobe coupled to input voltage (V_(IN)). Conversely turning on of low-sidepower MOSFET switch 103 and turning off high-side power MOSFET 102causes switch node (SW) 101SW to be coupled to electrical ground 101G.In switch-mode regulators, the turn on and off cycle of high-side MOSFETswitch 102 and low-side MOSFET switch 103 is substantially greater thanthe filter frequency of formed by inductor 151 and capacitor filter 152.Hence, output voltage terminal (V_(cur)) 161 is the time average ofinput voltage (V_(IN)) and the PWM signal's duty cycle. The result ofthe rising and falling of the inductor current (I_(L)) cause an averageoutput voltage (V_(OUT)) to be seen by load (R_(L)) 160. Therefore, theoutput voltage (V_(OUT)) at output terminal 161 is proportional to theinput voltage (V_(IN)) and either the duty cycle or the frequency of thepulse width modulation signal (PWM). Boot strap charging circuit 120ensures that high-side gate driver circuit 101 _(HS) receives voltagesto turn on and off high-side power MOSFET switch 102.

The circuit architecture of conventional switch mode voltage regulator100 described above can be pushed to deliver only a limited amount ofcurrent and power efficiency. Beyond this limitation, thecost-performance of conventional switch mode voltage regulator 100 seemsto degrade significantly. This is due to the inherent limitations ofhigh-side power MOSFET switch 102, low-side power MOSFET switch 103, andthe conventional circuit architecture and layout that give rise to highinterconnection resistance and high switching loss, especially whenswitching at high frequencies. High interconnection resistance causeshigh switching loss that renders conventional switch mode voltageregulator 100 undesirable. Furthermore, the architecture and layout ofprior-art switch mode voltage regulator 100 that involves separatediscrete components are difficult to meet the miniaturization trend intoday integrated circuits.

Referring now to FIG. 1B, a model circuit 100B for the high-side gatedriver circuit 101 _(HS), its corresponding high side MOSFET switch 102,low-side gate driver circuit 101 _(LS), and its corresponding low sideMOSFET switch 103 in conventional switch-mode voltage regulator circuit100 is shown. In switch-mode voltage regulator circuits such asswitch-mode voltage regulator circuit 100 in FIG. 1A, a criticalparameter affecting efficiency is how fast the high-side MOSFET switch102 and low-side MOSFET switch 103 can turn on and off. Typically, areal world MOSFET switch has a gate coupling resistance capacitanceproduct that can be modeled as a RC circuit electrically coupled to anideal MOSFET switch. The rise time of the gate coupling resistancecapacitance product in response to a Pulse Width Modulation (PWM)determines how fast and how efficient a MOSFET switch can switch.High-side power MOSFET switch 102 includes a gate resistance (R_(GATE))102R and a gate capacitance (C_(GATE)) 102C, both of which electricallycoupled to an ideal MOSFET switch 102W having an ON drain sourceresistance (R_(DS(ON))). In ideal high-side MOSFET switch 102W, thedrain terminal is electrically connected to a supply pad 102SP while thesource terminal is electrically connected to a switch pad 101SW.High-side gate driver circuit 101 _(HS) is an inverter that includes apull-up PMOS transistor 101 _(HSUP) and a pull-down NMOS transistor 101_(HSDN). Similarly, in ideal low-side MOSFET switch 103W, the drainterminal is electrically connected to switch pad 101 SW while the sourceterminal is electrically connected to a ground pad 101G. Low-side gatedriver circuit 101 _(LS) is an inverter that includes a pull-up PMOStransistor 101 _(LSUP) and a pull-down NMOS transistor 101 _(LSDN).

In practice, gate resistance (R_(GATE)) of a MOSFET switch is typically2 ohms and gate capacitance (C_(GATE)) is typically 5 nano farads (5nF). The gate coupling resistance capacitance product (also known astime constant T_(DISCRETE)) of conventional circuit architecture andlayout for prior-art switch-mode voltage regulator circuit 100 is:T_(DISCRETE)=C_(GATE)*R_(GATE)=(5 nF)×(2Ω)=10 nsec. With this timeconstant (T_(DISCRETE)) of 10 nano seconds, the conventionalarchitecture will yield a power loss of more than 1 watts when switchingfrequency is above 500 kHz, and the output current is above 20 Amps.This is because switching loss is a significant power loss factors forswitch-mode voltage regulator 100 when the switching frequency is above500 kHz. Switching loss (L_(S)) approximately equals to the product ofinput voltage (V_(IN)), switching frequency (F_(S)), output current(I_(OUT)), rise time (T_(DISRETE)). In other words,

$L_{S} \sim {V_{IN} \times F_{S} \times I_{OUT} \times {\frac{T_{DISCRETE}}{2}.}}$

As described above in FIG. 1A, given input voltage (V_(IN)), switchingfrequency (F_(S)), output current (I_(OUT)), and power loss (L_(S)) arefixed by design specifications, the conventional architecture and layoutof prior-art switch-mode voltage regulator circuit 100 that involvesdiscrete components cannot reduce the time constant (T_(DISCRETE)).Thus, what needed now is a new circuit architecture and layout forswitch-mode voltage regulator circuits that can substantially reduce thetime constant or the gate coupling resistance capacitance product(T_(DISCRETE)) of the MOSFET switches, thus improving thecost-performance factor of a switch-mode voltage regulator.

Accordingly, there are needs for a novel circuit architecture and layoutfor a switch-mode voltage regulator that does not have the limitationsof a conventional MOSFET switch in power delivery and efficiency.Moreover, there are needs for a novel circuit architecture that enablesa switch-mode voltage regulator to have low manufacturing costs andreduced in size. Finally, there are needs for novel circuit architectureand layout that can substantially reduce the gate coupling resistancecapacitance product specified by the RC equivalent of the MOSFETswitches so that the interconnection resistance can be substantiallyreduced at high frequencies. It is expected that the present inventionmay fulfill these needs.

SUMMARY

An objective of the present invention is to provide a novel circuitarchitecture and layout for a high power switch-mode voltage regulatorintegrated circuit that achieves low interconnection resistance, highcurrent handling capability, small package size, and inexpensivemanufacturing costs. Accordingly, a circuit configuration for a highpower switch-mode voltage regulator circuit is disclosed that includesan array of Metal Oxide Semiconductor (MOS) switching transistorselectrically coupled to one another at their drains and sources, and aplurality of gate driver circuits. Each gate driver circuit is coupledsubstantially close to the gate and dedicated to driving only one MOSswitching transistor.

Another objective of the present invention is to provide a method ofproviding a high power switch-mode voltage regulator circuit. Thedisclosed method includes the steps of providing an array of switchingelements, providing a plurality of gate driver circuit such that eachgate driver circuit is electrically coupled and dedicated to drivingonly one switching element, and providing a plurality of electricalinput/output nodes to facilitate the communication between the switchingelement and gate driver circuit pair to external circuitry.

These and other advantages of the present invention will no doubt becomeobvious to those of ordinary skill in the art after having read thefollowing detailed description of the preferred embodiments, which areillustrated in the various drawing Figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form a part ofthis specification, illustrate embodiments of the invention and,together with the description, serve to explain the principles of theinvention.

FIG. 1A illustrates a prior art switch-mode voltage regulator circuitarchitecture that includes a driver circuit block, a switching circuitblock, and an output filter block, all laid out as separate discretecomponents on a semiconductor chip.

FIG. 1B illustrates a schematic diagram of the circuit architecture ofFIG. 1A that has a gate coupling resistance capacitance product and anR-C equivalent circuit.

FIG. 2A illustrates a block diagram of a high power switch-mode voltageregulator circuit architecture that include an array of switchingelements and corresponding gate driver circuit all integrated togetherin a single semiconductor chip in accordance with an embodiment of thepresent invention.

FIG. 2B illustrates a block diagram of an a high power switch-modevoltage regulator circuit architecture that has a high-side switchpartitioned into a high-side array of switching elements and a low-sideswitch partitioned into a low-side array of switching elements inaccordance with an embodiment of the present invention.

FIG. 2C illustrates an RC equivalent circuit and the gate couplingresistance capacitance product resulted from the architecture and layoutof the switch-mode voltage regulator circuit shown in FIG. 2B inaccordance with an embodiment of the present invention.

FIG. 3 illustrates a detailed schematic diagram of an exemplaryhigh-side switching element and a low-side switching element thatimplement the circuit architecture of FIG. 2B in accordance with anembodiment of the present invention.

FIG. 4 illustrates a detailed schematic diagram of an array of switchingelements having a floating boot strap charging circuit in accordancewith an embodiment of the present invention.

FIG. 5 illustrates a detailed schematic diagram of a high-side array ofswitching elements electrically coupled to a low-side array of switchingelements in accordance with an embodiment of the present invention.

FIG. 6 illustrates a detailed schematic diagram of a gate driver circuitin accordance with an embodiment of the present invention.

FIG. 7 a flow chart of a method of building high power switch-modevoltage regulator circuit in accordance with an embodiment of thepresent invention.

DETAILED DESCRIPTION

Reference will now be made in detail to the preferred embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. While the invention will be described in conjunction with thepreferred embodiments, it will be understood that they are not intendedto limit the invention to these embodiments. On the contrary, theinvention is intended to cover alternatives, modifications andequivalents, which may be included within the spirit and scope of theinvention as defined by the appended claims. Furthermore, in thefollowing detailed description of the present invention, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present invention. However, it will be obvious toone of ordinary skill in the art that the present invention may bepracticed without these specific details. In other instances, well-knownmethods, procedures, components, and circuits have not been described indetail so as not to unnecessarily obscure aspects of the presentinvention.

Now referring to FIG. 2A, a circuit architecture (configuration) for ahigh power switch-mode voltage regulator circuit 200A that includes anarray of switching elements 201, an output filter 220, and a floatingboot strap charging circuit 250 in accordance with an embodiment of thepresent invention is illustrated. More particularly, array of switchingelements 201 is arranged in rows and columns, and a plurality ofinput/output (I/O) electrical nodes further including an inverse drivesignal node ( PWM) 207 _(HS), an input voltage node 208, at least onevoltage supply node 209 ₁-209 ₂, and a switch node (SW) 213. It is notedthat “an electrical node” in the present application is defined aselectrical means for operating and communicating electrical variablessuch as currents and voltages between high power switch-mode switchingregulator 200A with external circuitry. Examples of “electrical node”includes, but not limited to, electrical pads, power buses, electricalwires, electrical lines, bond wires, flip chip bumps, and finger shapedstructures of a lead frame structures, electrical leads, all are withinthe scope of the present invention.

In particular, drive signal node 207 _(HS) receives an inverse PulseWidth Modulation ( PWM) signal for driving switching elements 201. Inputvoltage node 208 couples an unregulated input voltage (V_(IN)) intoarray of switching elements 201. At least one supply voltage node 209₁-209 ₂ includes a first supply voltage node 209 ₁ that couples a bootstrap voltage (V_(BST)) into array of switching elements 201. In oneembodiment, at least one supply voltage node 209 ₁-209 ₂ also includes asecond supply voltage node 209 ₂ that couples a second supply voltage(V_(EE)) into array of switching elements 201. Switch node (SW) 213 sumsup all the currents from each switching element 201. In addition, switchnode (SW) 213 is also an output node that is connected to output filter220. Output filter 220 includes an inductor 221 connected in series toan output capacitance 222. The second terminal of output capacitance 222is connected to electrical ground 110G. An output terminal 231 suppliesthe desired output voltage (V_(OUT)). First supply voltage node 209 ₁ isalso connected to floating boot strap charging circuit 250 and a bootcapacitor (C_(BOO-r)) 212. The second terminal of boot strap capacitor(C_(BOOT)) 212 is connected to switch node (SW) 213 and to the firstterminal of inductor 221. In one embodiment, an asynchronous diode (D₁)240 is also included. The cathode terminal electrically coupled toswitch node (SW) 213 and the anode terminal electrically coupled toelectrical ground 110G. In one embodiment, a boot pad 211 iselectrically coupled to at least one supply voltage node 209 ₁-209 ₂ andto floating boot strap charging circuit 250. The other side of boot pad211 is electrically coupled to boot capacitor (C_(BOOT)) 212 which iselectrically coupled to output filter 220 and to asynchronous diode (D₁)240 at high node (SW) 213.

Continuing with FIG. 2A, in operation, each switching element 201 isoperable to connect unregulated supply node (V_(IN)) 208 high sideswitch node (SW) 213 upon receiving an inverse drive signal ( PWM) atdrive signal node 207 _(HS). At that moment, switch node (SW) 213 sumsup all the currents from all switching elements 201 and outputs them tooutput filter 220. From this point on, high power switch-mode voltageregulator 200A operates on the same principle as any other switch-modevoltage regulator, e.g., output filter 220 operable to filter outripples and to generate only a constant average output voltage. Floatingboot strap charging circuit 250 functions to pass the correct voltagelevels to at least one supply voltage nodes 209 _(i)-209 ₂ so that eachswitching element 201 receives the correct switching voltages regardlessof the voltage level of switch node (SW) 213. In conventional boot strapcharging circuits such as switch-mode voltage regulator circuit 100 inFIG. 1A, switch node (SW) 101 _(SW) has to be at a certain voltage levelthat it can charge up boot capacitor (C_(BOOT)) 122 and pass correctvoltage levels to high-side gate driver circuit 101 _(HS) and low-sidegate driver circuit 101 _(LS).

Now referring to FIG. 2B, an embodiment of the present inventionillustrated by a high performance switching voltage regulator 200B thatincludes a low side array of switching elements 202 in addition to arrayof switching elements 201. In this configuration, array of switchingelements 201 is hereinafter referred to as high-side array of switchingelements. High performance switching voltage regulator 200B includessecond supply voltage node 209 ₂ electrically connected to electricalground 110G and a third supply voltage node 209 ₃ electrically coupledto a charging circuit 260 and to supply voltage (V_(CC)) 215. Low-sidearray of switching elements 202 also includes a low side drive signalnode 207 _(LS), a low-side switch node (SW_(LS)) 214. Low side drivesignal node 207 _(LS) receives Pulse Width Modulation (PWM) signal todrive low side switching elements 202. Low-side switch node (SW_(LS))214 is connected to high-side switch node (SW_(HS)) 213 and to outputfilter 220. Charging circuit 260 regulates voltage levels so thatlow-side switching elements 202 switch properly.

In operation, each high-side switching element 201 and low-sideswitching elements 202 are complementarily turned on and off. Thecurrents from high-side switching element 201 are summed up at high-sideswitch node (SW_(HS)) 213 and the currents from low-side switchingelement 202 are summed up at low side switch node (SW_(LS)) 214.Together, the total currents are delivered to inductor 221 to charge anddischarge output capacitor (C_(our)) 222. As a result, load (R_(L)) 230sees an average output voltage proportional to the duty cycle of drivesignal (PWM) and input voltage (V_(IN)).

Now referring to FIG. 2C, a model circuit 200C illustrating the gatecoupling resistance capacitance product of high side switching element201 and low side switching element 202 is illustrated. In one embodimentof the present invention, each high-side switching element 201 includesa logic circuitry 201 _(HS) electrically coupled to dedicatedly driveonly one Double Diffused Metal Oxide Field Effect Transistor (DMOStransistor). In practice, each DMOS switch can be modeled by a gateresistor 201R having a gate resistance R_(ATE) and a gate capacitor 201Chaving a gate capacitance C′_(GATE), both electrically coupled in seriesto an ideal DMOS transistor 201W having a minimal ON resistance,R_(DS(ON),min). In one embodiment, logic circuitry 201 _(HS) is aninverter having a pull-up p-channel Metal Oxide Semiconductor (PMOS) 201_(HSUP) and a pull-down n-channel Metal Oxide Semiconductor (NMOS) 201_(HSDN). Similarly, each low-side switching element 202 includes a logiccircuitry 202 _(LS) electrically coupled to drive only one DoubleDiffused Metal Oxide Field Effect Transistor (DMOS transistor) switch.In practice, each DMOS switch can be modeled by a gate resistor 202Rhaving a gate resistance R′_(GATE) and a gate capacitor 202C having agate capacitance C′_(GATE), both electrically coupled in series to anideal DMOS switch 202W having a minimal ON resistance, R_(DS(ON),min).In one embodiment, logic circuitry 202 _(LS) is an inverter having apull-up p-channel Metal Oxide Semiconductor (PMOS) 202 _(HSUP) and apull-down n-channel Metal Oxide Semiconductor (NMOS) 202 _(HSDN).

Continuing with the model circuit 200C of FIG. 2C, each high-side switchelements 201 and low-side switch element 202 in accordance with anembodiment of the present invention are substantially smaller thanhigh-side switch 101 and low-side switch 102 respectively. Accordingly,the gate resistance (R′_(GATE)) and the gate capacitance (C′_(GATE)) ofhigh-side switch elements 201 and low-side switch element 202 are Ntimes smaller than those of the prior art switching regulator circuit100A. The gate coupling resistance and capacitance product (T_(IC)) ofswitch-mode voltage regulator integrated circuit 200B now becomes:

$\begin{matrix}{T_{IC} = {C_{GATE}^{\prime}*R_{GATE}^{\prime}}} \\{= {\left( \frac{R_{GATE}}{N} \right) \times \left( \frac{C_{GATE}}{N} \right)}} \\{= {\left( \frac{2\; \Omega}{10} \right) \times \left( \frac{5\; n\; F}{10} \right)}} \\{= 0.}\end{matrix}$

0.10 nsec. Given the same amount of switching loss (L_(S)), outputcurrent (I_(OUT)), input voltage (V_(IN)), and switching frequency(F_(S)) as those in prior art architecture shown in FIG. 1B, this gatecoupling capacitance and resistance product (T_(IC)) of the novelcircuit architecture and layout will yield a power switching loss

${L_{S} \sim {V_{IN} \times F_{S} \times I_{OUT} \times \frac{T_{IC}}{2}}},$

which is about 100 times smaller than the switching loss of theconventional circuit architecture.

Now referring to FIG. 3, a detailed schematic of high-side switchingelement 201 and low-side switching element 202 in accordance with anembodiment of the present invention is shown. High-side switchingelement 201 includes a gate driver circuit 330 electrically coupled todrive a switching transistor circuit 340. In one embodiment of thepresent invention, every column of high-side array of switching elements201 is connected to a boot pad 211 and passing circuitry 320. It isnoted that any combinations of passing circuitry 320 and high-sideswitching elements 201 thereof are within the scope of the presentinvention. More particularly, boot pad 211 is electrically connectedfirst supply voltage node 209 ₁ where supply voltage (V_(BST)) isapplied and distributed to every high-side switching element 201.Passing circuitry 320 includes a p-channel Metal Oxide SemiconductorField Effect Transistor (PMOS) 322 electrically coupled to a diode 323.The drain electrode of PMOS transistor 322 is connected to the anodeterminal of diode 323. The gate of PMOS transistor 322 is electricallycoupled to receive an output signal from floating boot strap chargingcircuit 250. In one embodiment of the present invention, gate drivercircuit 330 includes a Complementary Metal Oxide Semiconductor (CMOS)inverter having a pull-up p-channel Metal Oxide Field Effect Transistor(PMOS) 332 and a pull-down n-channel Metal Oxide Field Effect Transistor(NMOS) 333. That is, the drain of pull-up PMOS transistor 332 isconnected to the drain of pull-down NMOS transistor 333 to form anoutput terminal of gate driver circuit 330. The gate of pull-up PMOStransistor 332 is connected to the gate of pull-down NMOS transistor 333to form an input terminal 331 of gate driver circuit 330. In oneembodiment of the present invention, input terminal 207 _(HS) receivesan inverse Pulse Width Modulation ( PWM) signal to turn on and offswitching device 340. The source of pull-up PMOS transistor 332 isconnected to the cathode terminal of diode 323 and to boot pad 211. Inone embodiment, switching transistor circuit 340 includes an n-channelDouble Diffused Metal Oxide Semiconductor (DMOS transistor) 341, asupply pad 342, and a switch pad 343. The gate of DMOS 341 iselectrically connected to the output terminal of gate driver circuit330. The source of DMOS transistor 341 is electrically coupled to switchpad 343 and to the source of NMOS transistor 333 of gate driver circuit330. The drain of DMOS transistor 342 is electrically connected tosupply pad 342 and to the drain of passing PMOS transistor 322. In oneembodiment, boot pad 211, supply pad 342, and switch pad 343 areinput/output (I/O) electrical nodes that facilitate the communicationbetween each high-side switching element 201 and external circuitry (notshown). More specifically, in one embodiment, all supply pads 342 arepicked up by input voltage node 208. All switch pads 343 are picked upby switch node (SW_(HS)) 213, and all the sources of pull-up PMOStransistor 332 are coupled to first supply voltage node 209 ₁.

Continuing with FIG. 3, low-side switching element 202 includes a gatedriver circuit 360, and a switching transistor circuit 370. In oneembodiment, every column of low-side array of switching elements 202further includes a supply voltage pad (V_(CC)) 215 and passing circuitry350. It is noted that any combinations of passing circuitry 350 andlow-side array of switching elements 202 thereof are within the scope ofthe present invention. More particularly, supply voltage pad (V_(CC))215 is where supply voltage (V_(CC)) is applied. Passing circuitry 350includes a p-channel Metal Oxide Semiconductor Field Effect Transistor(PMOS) 352. The drain terminal of PMOS transistor 352 is connected togate driver circuit 360. The gate of PMOS transistor 352 is electricallycoupled to receive an output signal from charging circuit 260. Gatedriver circuit 360 includes a logic circuitry that receives a logiclevel signal (PWM) to drive switching transistor circuit 370. In oneembodiment of the present invention, gate driver circuit 360 includes aComplementary Metal Oxide Semiconductor (CMOS) inverter having a pull-upp-channel Metal Oxide Field Effect Transistor (PMOS) 362 and a pull-downn-channel Metal Oxide Field Effect Transistor (NMOS) 363. That is, thedrain of pull-up PMOS transistor 362 is connected to the drain ofpull-down NMOS transistor 363 to form an output terminal of gate drivercircuit 360. The gate of pull-up PMOS transistor 362 is connected to thegate of pull-down NMOS transistor 363 to form an input terminal 207_(LS) of gate driver circuit 360. In one embodiment of the presentinvention, input terminal 207 _(LS) receives a Pulse Width Modulation(PWM) signal to turn on and off switching transistor circuit 370. Thesource of pull-up PMOS transistor 362 is connected to the drain terminalof MOSFET transistor 352 and to supply voltage pad (V_(CC)) 215.Switching transistor circuit 370 includes a Double Diffused Metal OxideSemiconductor (DMOS) transistor 371, a switch pad 372, and a ground pad373. The gate of DMOS transistor 371 is electrically connected to theoutput terminal of gate driver circuit 360. The source of DMOStransistor 371 is electrically coupled to ground pad 373 and to thesource of pull-down NMOS transistor 363 of gate driver circuit 360. Thedrain of DMOS transistor 371 is electrically connected to switch pad372, switch pad 343, and to the source of pull-down NMOS transistor 333.Supply voltage pad (V_(CC)) 215, switch pad 372, and ground pad 373 areinput/output (I/O) electrical nodes that facilitate the communicationbetween low-side switching elements 202 and external circuitry (notshown).

Now referring to FIG. 4, a schematic diagram of high power switch-modevoltage regulator integrated circuit 400 in accordance with anembodiment of the present invention is illustrated. High powerswitch-mode voltage regulator integrated circuit 400 includes only arrayof switching elements 201 as described in FIG. 2A and FIG. 3. Eachswitching elements 201 are electrically connected to one another and tofloating boot strap charging circuit 250. In one embodiment, floatingboot strap charging circuit 250 includes a low drop-out (LDO) voltageregulator circuit that regulates and passes correct voltage levels toeach switching element 201. The low drop-out (LDO) voltage regulatorcircuit includes a differential transconductance amplifier connected inseries to a PMOS transistor 406, and to resistors 404-405. Thedifferential transconductance amplifier includes an NPN emitter coupledpair 401-402 biased by a current mirror configured by PMOS transistors407 and 408. The base of NPN transistor 401 receives a reference voltage(V_(REF)) 410 and the base of NPN transistor 402 receives a voltageproportional to boot strap voltage (V_(BST)). Array of switchingelements 201 is coupled to floating boot strap charging circuit 250 viaa negative feedback path. More particularly, the negative feedback pathbegins at the output of the differential transconductance amplifier thatis connected to the drain of PMOS transistor 407 which drives PMOS passtransistors 322. The output current of PMOS transistor 322 is coupled tothe regulated boot strap voltage (V_(BST)) through diodes 323. As such,a voltage proportional to boot strap voltage (V_(BST)) minus thethreshold voltage of PMOS transistor 406 is thus formed across resistor404. Accordingly, the proportional voltage is imparted across resistor405, and thus completing the negative feedback path.

Continuing with FIG. 4, array of switching elements 201 is arranged inrows 210R and columns 210C. In one embodiment, each column 201C has onlyone passing circuitry 320. More particularly, gate terminals of all PMOStransistors 322 are all connected together and to the output terminal offloating boot strap charging circuit 240 which is the drain terminal ofPMOS transistor 407. Supply pads 342 of n-channel DMOS transistors 341are all connected together and to the source terminals of MOSFETtransistors 407 and 408 respectively. The cathode terminals of alldiodes 323 of each column 210C are connected together and to boot pad211. Boot pad 211 is also connected to the second terminal of resistor404 and to the body of PMOS transistor 406. All switch pads 343 withinhigh power switching regulator 400 are connected together and to thegate terminal of MOSFET transistor 406.

Now referring to FIG. 5, a schematic diagram of a high power switch-modevoltage regulator integrated circuit 500 that includes a high-side arrayof switching elements 201 and low-side array of switching elements 202is illustrated. The interconnections between high-side switchingelements 201 are as shown in previous FIG. 4. As for theinterconnections of low-side array of switching elements 202, low-sidearray of switching elements 202 are connected together and to chargingcircuit 260 via a negative feedback path. Charging circuit 260 includesa differential transconductance amplifier configured by NPN emittercoupled pair 604-605 biased by a current mirror configured by PMOStransistors 607 and 608. A first input voltage to differentialtransconductance amplifier is reference voltage (V_(REF)) 601. Thenegative feedback path begins at second input voltage, proportional tothe regulated supply voltage (V_(CC)), which is applied to the base ofn-type bipolar junction transistor 605. The output of differentialtransconductance amplifier 604-605 drives PMOS transistors 352. In turn,the output current of PMOS transistor 352 is coupled to the regulatedsupply voltage (V_(CC)). A voltage proportional to supply voltage(V_(CC)) is coupled to the base of PMOS transistor 605 through resistors610 and 611, thus completing the negative feedback path.

Referring again to FIG. 5, in low-side array of switching elements 202,all gate terminals of PMOS transistors 352 are connected together and tothe collector terminal of first bipolar junction transistor 604. Thesource terminals of all PMOS transistors 352 are connected together andto all drain terminals of PMOS transistors 322 in high-side array ofswitching elements 201, which are all connected to supply pads 342. Alldrain terminals of PMOS transistors 352 are all connected together andto the base terminal of second bipolar junction transistor 605, allconnected to supply voltage (V_(CC)) pad 215. Ground pads 373 oflow-side switching elements 202 are connected together and to electricalground 110G. Switch pads 343 of high-side array of switching elements201 are connected to switch pads 372 of low-side array of switchingelements 202 where currents from all high-side switching elements 201and low-side switching elements 202 are added up together and allconnected to output filter 220.

Referring again to FIG. 2B and FIG. 5 for the operation of high powerswitch-mode voltage regulator circuit 500, each high-side switchingelement 201 receives a drive signal in the form of an inverse PulseWidth Modulation ( PWM) at input terminal 207 _(HS) that either pulls upor pulls down gate driver circuit 330. When gate driver circuit 330 ispulled up (e.g., PWM signal is at logic LOW), high-side DMOS switches341 are turned ON and connects supply pads 342 to switch pads 343. Atthe same moment, in low-side array of switching elements 202, eachlow-side switching elements 202 receives a driver signal (PWM). Gatedriver circuit 360 is pulled down to electrical ground 110G and low-sideDMOS switches 371 are turned OFF. Accordingly, referring again to FIG.2B, high-side switch node (SW_(HS)) 213 and low side switch node(SH_(LS)) 214 are connected to input voltage (V_(IN)) 208. On the otherhand, when high-side switching elements 201 receives a high PWM signaland low-side array of switching elements 202 receives an oppositesignal, gate driver circuit 330 are pulled down and gate driver circuit360 are pulled up. As a result, high-side switch node (SW_(HS)) 213 andlow side switch node (SW_(LS)) 214 are connected to electrical ground101G.

Continuing with the operation of high power switch-mode voltageregulator circuit 500 of FIG. 5, floating boot strap charging circuit250 and charging circuit 260 function to ensure respective high-sideDMOS switches 341 and low-side DMOS switches 371 are alternately turnedON and OFF in such a manner to connect switch pads 343 and 372 to eitherinput voltage (V_(IN)) or electrical ground 101G. In order to insuresufficient bias voltages are available to drive the gate of high-sideDMOS switch 341, the voltage at the gate of PMOS transistor 321 isdriven by the output of differential transconductance amplifier 401-402.Note that PMOS transistors 322 are always under the control of floatingboot strap charging circuit 250 and can charge the boot strap voltage(V_(BST)) as long as the differential voltage between input voltage(V_(IN)) and switch voltage (V_(SW)) is higher than the forward voltageof diode 323. Prior art boot strap charging circuits only charge bootcapacitor (C_(BOOT)) 122 when switch node (SW) 101SW is below a fixedvoltage. Diode 323 prevents current from flowing from the boot capacitor(C_(BOOT)) connected to boot pad 211 into the PMOS the drain of PMOStransistor 321 wherein the voltage is higher than the input voltage(V_(IN)). In low-side array of switching elements 202, in order toinsure sufficient bias voltages are available to drive the gate oflow-side DMOS transistor 371, the gate voltage of PMOS transistor 352 isdriven by the output of differential transconductance amplifier 604-605.Note that PMOS transistor 352 is always under the control of gatecontrol circuit 250 and regulates supply voltage (V_(CC)).

Now referring to FIG. 6, a schematic diagram of a high power switch-modevoltage regulator circuit 600 that has a different type of gate drivercircuit is shown. High power switch-mode voltage regulator circuit 600includes an array of switching elements 540. In each switching element540, a gate driver circuit configured by a first inverter 510, a secondinverter 520, and a third inverter 530. First inverter 510, secondinverter 520, and third inverter 530 are coupled together in series todrive a power Double Diffused Metal Oxide Semiconductor Field EffectTransistor (DMOS) switch 544. First inverter 510 includes a pull-up PMOS511 stacked on top of a pull-down NMOS transistor 512 to form aninverter. The gates of pull-up PMOS transistor 511 and pull-down NMOStransistor 512 are connected together to form an input terminal 542.Similarly, second inverter 530 includes a pull-up PMOS transistor 521and a pull-down NMOS transistor 522. Finally, third inverter 530includes a pull-up PMOS transistor 531 and a pull-down NMOS transistor532. The source of pull-up PMOS transistor 531 is connected to the drainof pull-down NMOS transistor 532 to form an output terminal. The outputterminal is connected to the gate of DMOS switch 544. The drain of DMOSswitch 544 forms a supply pad 543 and the source forms a switch pad 545.Continuing with FIG. 6, all input terminals 542 of all switchingelements 540 are connected together to form a gate input terminal 501.Gate input terminal 501 drives gate driver circuit configured byinverters 510, 520, and 530. The source terminals of all inverters 510,520, 530 of all switching elements 540 are connected together and to aboot pad 541. It is noted that any type of gate driver circuit thatdrives switching element 540 is within the scope of the presentinvention.

Now referring to FIG. 7, a flow chart of a method 700 of achieving highperformance switch-mode voltage regulator that can produce largecurrent, achieve high power efficiency, low interconnection resistance,small physical size, and low cost is illustrated. The disclosed methodincludes the steps of providing an array of switching elements,providing a plurality of gate driver circuit such that each gate drivercircuit is electrically coupled and dedicated to driving only oneswitching element, and providing a plurality of electrical input/outputnodes to facilitate the communication between the switching element andgate driver circuit pair to external circuitry.

Now referring to step 701, an array of switching elements, each having asubstantially reduced gate coupling resistance capacitance product isprovided. In step 701, instead of using a conventional discrete powerMetal Oxide Field Effect Transistor (MOSFET) switch, an array ofsubstantially smaller DMOS switches connected in parallel is used. EachDMOS switch has a dimension that substantially reduces the gate couplingresistance capacitance product. High-side array of switching elements201 and low side array of switching elements 202 described in details inprevious Figures is realized by the implementation of step 701.

Next, referring to step 702, a gate driver circuit is coupled to eachswitch element provided by step 701 in such a manner that theinterconnection resistance between the driver circuit and itscorresponding switching device is substantially reduced. In oneembodiment of the present invention, the gate driver circuit is a logiccircuitry that outputs logic level signals that drive high sideswitching elements 201 and low side switching elements 202. In oneembodiment, step 702 is implemented by a single gate inverter circuitsuch as inverter circuit configured by pull-up PMOS transistor 332 andpull-down NMOS transistor 333 for high side switching element 201. Forlow side switching elements 202, gate driver circuit of step 702 can beimplemented by pull-up PMOS transistor 362 connected in series topull-down NMOS transistor 363. In one embodiment, step 702 isimplemented by a series of inverter circuits such as inverter circuits510, 520, and 530 as shown in FIG. 6.

Finally, referring to step 703, a plurality of electrical input/output(I/O) nodes are provided to facilitate the communication between theswitching elements and external circuitry. Step 703 is implemented byinput voltage electrical node 208, supply voltage node 209, high sideswitch node (SW_(HS)) 213 in FIG. 2A. In addition, low side switch node(SW_(LS)) 214 and ground node 209 ₂ in low side array 270 are exemplaryinput/output nodes shown in FIG. 2B. Finally, boot pad 211, supply pad342, high side switch pads 343 and low side switch pad 372, electricalground pads 373 are also implementations of step 703. In one embodiment,input/output (I/O) nodes are implemented so that they have minimalinterconnection resistance. In one embodiment, input/output (I/O)electrical nodes include flip chip bumps placed substantially closed toDMOS switches 341 and 371. Furthermore, the implementation ofinput/output nodes of step 703 can also includes electrical leads, powerbuses, flip chip bumps, finger shaped structures, and other suitablemeans as disclosed in a patent application entitled “Layout Scheme forHigh Performance Switch-Mode Voltage Regulator Circuits” also by PaulUeunten, filed on the same date with the present application, thedisclosure of which is hereby incorporated by reference.

Obviously many modifications and variations of the present invention arepossible in light of the above teachings. It is therefore to beunderstood that within the scope of the appended claims the inventionmay be practiced otherwise than as specifically described. It should beunderstood, of course, the foregoing disclosure relates only to apreferred embodiment (or embodiments) of the invention and that numerousmodifications may be made therein without departing from the spirit andthe scope of the invention as set forth in the appended claims. Variousmodifications are contemplated and they obviously will be resorted to bythose skilled in the art without departing from the spirit and the scopeof the invention as hereinafter defined by the appended claims as only apreferred embodiment(s) thereof has been disclosed.

1. A high power switch-mode voltage regulator circuit, comprising anarray of switching elements, wherein each said switching element furthercomprises a switching transistor circuit and a gate driver circuitdedicated to drive said corresponding switching transistor circuit, andwherein said switching transistor circuits of said array of switchingelements are connected in parallel with drains connected together andsources connected together.
 2. The high power switch-mode voltageregulator circuit of claim 1 wherein said switching transistor circuitis a Metal Oxide Semiconductor (MOS) switching transistor.
 3. The highpower switch-mode voltage regulator circuit of claim 2 furthercomprising a plurality of input/output (I/O) electrical nodeselectrically coupled to said array of switching elements forfacilitating communications between external circuitry and said array ofswitching elements.
 4. The high power switch-mode voltage regulatorcircuit of claim 3 wherein the gate of said switching transistor circuitis electrically connected to the output terminal of said correspondinggate driver circuit, the source of said switching transistor circuit iselectrically connected to a switch pad and the drain of said switchingtransistor circuit is electrically connected to a supply pad; and saidplurality of input/output (I/O) electrical nodes further comprises: aswitch node (SW) electrically coupled to pick up all said switch pads;an input voltage node electrically coupled to pick up all said supplypads to couple an unregulated input voltage into said switchingtransistor circuits; and at least one supply voltage nodes electricallycoupled to provide supply voltage to said gate driver circuits.
 5. Thehigh power switch-mode voltage regulator circuit of claim 3 wherein saidplurality of input/output (I/O) electrical nodes further comprisesplurality of electrical pads adapted to receive flip chip bumps thatelectrically couple the communication between external circuitry andsaid array of switching elements.
 6. The high power switch-mode voltageregulator circuit of claim 1 further comprises a floating boot strapcharging circuit electrically coupled to said array of switchingelements and operable to regulate a switching voltage to said array ofswitching elements.
 7. The high power switch-mode voltage regulatorcircuit of claim 6 wherein said floating boot strap charging circuitfurther comprises a plurality of passing circuitries each electricallycoupled to pass said correct switching voltage to one of said switchingelement so that said gate driver circuit is operable to turn on and offsaid corresponding switching transistor circuit.
 8. The high powerswitch-mode voltage regulator circuit of claim 7 wherein each of saidpassing circuitry further comprises a p-channel Metal OxideSemiconductor Field Effect Transistor (PMOS transistor) and a diodeelectrically coupled in series to said PMOS transistor, the gate of saidPMOS transistor being electrically coupled to said floating bootstrapcharging circuit, and the drain of said PMOS transistor beingelectrically coupled to the anode terminal of said diode, the source ofsaid PMOS transistor being electrically coupled to said switchingtransistor circuits, and the cathode terminal of said diode beingelectrically coupled to said gate driver circuits.
 9. The high powerswitch-mode voltage regulator circuit of claim 8 wherein said floatingbootstrap charging circuit further comprises a low drop-out (LDO)voltage regulator circuit.
 10. The high power switch-mode voltageregulator circuit of claim 9 wherein said LDO voltage regulator circuitfurther comprises: an error amplifier having an output terminal thatdrives said plurality of passing circuitry and provides a voltage tosaid plurality of gate driver circuits; and a negative feedback circuitelectrically coupling the drains of said high-side switching transistorcircuits to an input terminal of said error amplifier.
 11. The highpower switch-mode voltage regulator circuit of claim 10 wherein saiderror amplifier further comprises: a first bipolar junction transistorand a second bipolar junction transistor electrically coupled to saidfirst bipolar junction transistor, an emitter terminal of said firstbipolar junction transistor being electrically coupled to an emitter ofsaid second bipolar junction transistor, a base terminal of said firstbipolar junction transistor being electrically coupled to a voltagereference (V_(REF)), a base terminal of said second bipolar junctiontransistor being electrically coupled to said negative feedback circuit;a first biasing resistor having a first terminal and a second terminal,said first terminal being electrically coupled to the emitter terminalsof said first bipolar junction transistor and said second bipolarjunction transistor, said second terminal being electrically coupled toan electrical ground; and a biasing current mirror circuit having afirst p-channel Metal Oxide Semiconductor Field Effect Transistor (PMOS)and a second p-channel Metal Oxide Semiconductor Field Effect Transistor(PMOS), a gate of said first PMOS transistor being electrically coupledto a gate of said second PMOS transistor and to a drain of said secondPMOS transistor, sources of said first PMOS transistor and said secondPMOS transistor being electrically coupled together and to saidplurality of passing circuitry, a drain of said first PMOS transistorbeing electrically coupled to the collector terminal of said firstbipolar junction transistor and a drain of said second PMOS transistorbeing electrically coupled to a collector terminal of said secondbipolar junction transistor, thereby forming said output terminal ofsaid error amplifier.
 12. The high power switch-mode voltage regulatorcircuit of claim 11 wherein said negative feedback circuit furthercomprises: a first resistor having a first terminal electrically coupledto each of said plurality of gate driver circuits; an p-channel MetalOxide Semiconductor Field Effect Transistor (PMOS) having a sourceelectrically coupled to a second terminal of said first resistor, thegate of said PMOS transistor being electrically coupled said high-sideswitching transistor circuits; and a second resistor having a firstterminal electrically coupled to a drain of said PMOS transistor, and asecond terminal of said second resistor being electrically coupled to anelectrical ground.
 13. The high power switch-mode voltage regulatorcircuit of claim 1 wherein said an array of switching elements is anarray of high-side array of switching elements, and wherein said highpower switch-mode voltage regulator further comprises an array oflow-side switching elements, and wherein: each said low-side switchingelement further comprises a low-side switching transistor circuit and agate driver circuit dedicated to drive said corresponding low-sideswitching transistor circuit, and said low-side switching transistorcircuits of said low-side array of switching elements being connected inparallel with drains connected together and sources connected together;and said low-side switching transistor circuits are electrically coupledto the high-side switching transistor circuits of said high-side arrayof switching elements in series, said high-side switching transistorcircuits and said low-side switching transistor circuits beingconfigured to be complementarily turned on and off by said gate drivercircuits.
 14. The high power switch-mode voltage regulator circuit ofclaim 13 wherein said high-side switching transistor circuit comprisesan n-channel Double Diffused Metal Oxide Semiconductor (n-channel DMOS)transistor and said low-side switching transistor circuit comprises ann-channel Double Diffused Metal Oxide Semiconductor (n-channel DMOS)transistor.
 15. The high power switch-mode voltage regulator circuit ofclaim 13 wherein said array of low-side switching elements furthercomprises a charging circuit electrically coupled to regulate voltagelevels to said gate driver circuits of said low-side array of switchingelements.
 16. The high power switch-mode voltage regulator circuit ofclaim 15 wherein said charging circuit further comprises: a firstbipolar junction transistor and a second bipolar junction transistorelectrically coupled to said first bipolar junction transistor, anemitter terminal of said first bipolar junction transistor beingelectrically coupled to an emitter of said second bipolar junctiontransistor, a base terminal of said first bipolar junction transistorbeing electrically coupled to a voltage reference (V_(REF)), a baseterminal of said second bipolar junction transistor being electricallycoupled to said gate driver circuits of said array of low-side switchingelements; a first biasing resistor having a first terminal and a secondterminal, said first terminal being electrically coupled to said emitterterminals of said first bipolar junction transistor and said secondbipolar junction transistor, said second terminal being electricallycoupled to an electrical ground; a current output stage having a firstp-channel Metal Oxide Semiconductor Field Effect Transistor (PMOS) and asecond p-channel Metal Oxide Semiconductor Field Effect Transistor(PMOS), a gate of said first PMOS transistor being electrically coupledto a gate of said second PMOS transistor and to a drain of said secondPMOS transistor, sources of said first PMOS transistor and said secondPMOS transistor being electrically coupled together and to said drainsof said high-side switching transistor circuits, a drain of said firstPMOS transistor being electrically coupled to a collector terminal ofsaid first bipolar junction transistor and the drain of said second PMOStransistor being electrically coupled to a collector terminal of saidsecond bipolar junction transistor; and a PMOS passing transistor havinga gate coupled to the current output stage, a source of said PMOStransistor being connected to said sources of second and third PMOStransistors, a drain of said PMOS transistor being connected to low sidegate driver circuits.
 17. The high power switch-mode voltage regulatorcircuit of claim 1 further comprising an output filter circuitelectrically coupled to said array of switching elements, said outputfilter further comprising an inductor and a capacitor electricallycoupled in series to said inductor.
 18. The high power switch-modevoltage regulator integrated circuit of claim 1 wherein said gate drivercircuit comprises a logic circuit that generates a logic HIGH signal anda logic LOW signal for respectively switching on and off said array ofswitching elements.
 19. The high power switch-mode voltage regulatorcircuit of claim 18 further comprises a pulse width modulation (PWM)circuit electrically coupled to said plurality of gate driver circuits.20. A method of configuring a high power switch-mode voltage regulatorcircuit, comprising: providing an array of parallel Metal OxideSemiconductors (MOS) transistors with drains connected together andsources connected together; and providing a plurality of gate drivercircuits so that each gate driver circuit is electrically coupled anddedicated to one of said MOS transistors; and driving said MOStransistors with a corresponding gate driver circuit in sequence. 21.The method of claim 20 further comprising placing each of said gatedriver circuit adjacent to a corresponding MOS transistor tosubstantially reduce an interconnection resistance between said gatedriver circuit and said MOS switching transistor.
 22. The method ofclaim 21 further comprises providing a voltage into said array of MOStransistors.
 23. The method of claim 22 further comprising facilitatingcommunication between a pair of MOS transistors and corresponding gatedriver circuits and an external circuitry.